SiCFET N-Channel, Silicon Carbide,FET Type
463pF @ 800V,Input Capacitance (Ciss) @ Vds
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SCT2450KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 10A (Tc) 585 mOhm @ 3A, 18V 4V @ 900µA 27nC @ 18V 463pF @ 800V 85W Through Hole TO-247-3