SiCFET N-Channel, Silicon Carbide,FET Type
220 mOhm @ 10A, 20V,Rds On (Max) @ Id, Vgs
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
CMF10120D CREE INC
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 152W Through Hole TO-247-3