N and P-Channel,FET Type
3W, 3.1W,Power - Max
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4599DY-T1-GE3 VISHAY SILICONIX
N and P-Channel 40V 6.8A, 5.8A 35.5 mOhm @ 5A, 10V 3V @ 250µA 20nC @ 10V 640pF @ 20V 3W, 3.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)