N and P-Channel,FET Type
2.3W,Power - Max
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AOP610 ALPHA & OMEGA SEMICONDUCTOR LTD
N and P-Channel 30V 7.7A, 6.2A 24 mOhm @ 7.7A, 10V 3V @ 250µA 15nC @ 10V 630pF @ 15V 2.3W Through Hole 8-DIP (0.300", 7.62mm)
FW907-TL-E ON SEMICONDUCTOR
N and P-Channel 30V 10A 17 mOhm @ 10A, 10V - 17nC @ 10V 1000pF @ 10V 2.3W Surface Mount 8-SOIC (0.173", 4.40mm Width)
SI5517DU-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 39 mOhm @ 4.4A, 4.5V 1V @ 250µA 16nC @ 8V 520pF @ 10V 2.3W Surface Mount -