| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TPC8408,LQ(S | TOSHIBA CORP | N and P-Channel | 40V | 6.1A, 5.3A | 32 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 24nC @ 10V | 850pF @ 10V | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| FW342-TL-E | SANYO SEMICONDUCTOR CO LTD | N and P-Channel | 30V | 6A, 5A | 33 mOhm @ 6A, 10V | - | 16nC @ 10V | 850pF @ 10V | 1.8W | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | |
| SI6562CDQ-T1-GE3 | VISHAY SILICONIX | N and P-Channel | 20V | 6.7A, 6.1A | 22 mOhm @ 5.7A, 4.5V | 1.5V @ 250µA | 23nC @ 10V | 850pF @ 10V | 1.6W, 1.7W | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) |
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