N and P-Channel,FET Type
7.1nC @ 5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI5511DC-T1-E3 VISHAY SILICONIX
N and P-Channel 30V 4A, 2.3A 55 mOhm @ 4.8A, 4.5V 2V @ 250µA 7.1nC @ 5V 435pF @ 15V 2.1W, 1.3W Surface Mount 8-SMD, Flat Lead
SI5511DC-T1-GE3 VISHAY SILICONIX
N and P-Channel 30V 4A, 3.6A 55 mOhm @ 4.8A, 4.5V 2V @ 250µA 7.1nC @ 5V 435pF @ 15V 3.1W, 2.6W Surface Mount 8-SMD, Flat Lead