N and P-Channel,FET Type
6nC @ 4.5V,Gate Charge (Qg) @ Vgs
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
ZXMD63C02XTA DIODES INC
N and P-Channel 20V 2.4A, 1.7A 130 mOhm @ 1.7A, 4.5V 700mV @ 250µA 6nC @ 4.5V 350pF @ 15V 1.04W Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
FDMA1032CZ FAIRCHILD SEMICONDUCTOR CORP
N and P-Channel 20V 3.7A, 3.1A 68 mOhm @ 3.7A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 340pF @ 10V 700mW Surface Mount 6-WDFN Exposed Pad
ZXMD63C02XTC DIODES INC
N and P-Channel 20V 2.4A, 1.7A 130 mOhm @ 1.7A, 4.5V 700mV @ 250µA 6nC @ 4.5V 350pF @ 15V 1.04W Surface Mount 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF5851TR INTERNATIONAL RECTIFIER CORP
N and P-Channel 20V 2.7A, 2.2A 90 mOhm @ 2.7A, 4.5V 1.25V @ 250µA 6nC @ 4.5V 400pF @ 15V 960mW Surface Mount 6-TSOP (0.059", 1.50mm Width)
IRF5851TRPBF INTERNATIONAL RECTIFIER CORP
N and P-Channel 20V 2.7A, 2.2A 90 mOhm @ 2.7A, 4.5V 1.25V @ 250µA 6nC @ 4.5V 400pF @ 15V 960mW Surface Mount 6-TSOP (0.059", 1.50mm Width)
SI3586DV-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 2.9A, 2.1A 60 mOhm @ 3.4A, 4.5V 1.1V @ 250µA 6nC @ 4.5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3586DV-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 2.9A, 2.1A 60 mOhm @ 3.4A, 4.5V 1.1V @ 250µA 6nC @ 4.5V - 830mW Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI5513DC-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 3.1A, 2.1A 75 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
SI5513DC-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 3.1A, 2.1A 75 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead