N and P-Channel,FET Type
6.6nC @ 5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI5509DC-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 5A, 3.9A 52 mOhm @ 5A, 4.5V 2V @ 250µA 6.6nC @ 5V 455pF @ 10V 2.1W Surface Mount 8-SMD, Flat Lead
SI5509DC-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 6.1A, 4.8A 52 mOhm @ 5A, 4.5V 2V @ 250µA 6.6nC @ 5V 455pF @ 10V 4.5W Surface Mount 8-SMD, Flat Lead