N and P-Channel,FET Type
16nC @ 8V,Gate Charge (Qg) @ Vgs
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI5517DU-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 6A 39 mOhm @ 4.4A, 4.5V 1V @ 250µA 16nC @ 8V 520pF @ 10V 8.3W Surface Mount -
SIA537EDJ-T1-GE3 VISHAY SILICONIX
N and P-Channel 12V, 20V 4.5A (Ta) 28 mOhm @ 5.2A, 4.5V 1V @ 250µA 16nC @ 8V 455pF @ 6V 1.9W Surface Mount PowerPAK® SC-70-6 Dual
SI5517DU-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 39 mOhm @ 4.4A, 4.5V 1V @ 250µA 16nC @ 8V 520pF @ 10V 2.3W Surface Mount -