N and P-Channel,FET Type
60 mOhm @ 4.1A, 10V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4567DY-T1-E3 VISHAY SILICONIX
N and P-Channel 40V 4.1A, 3.6A 60 mOhm @ 4.1A, 10V 2.2V @ 250µA 12nC @ 10V 355pF @ 20V 1.85W, 1.95W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4567DY-T1-GE3 VISHAY SILICONIX
N and P-Channel 40V 5A, 4.4A 60 mOhm @ 4.1A, 10V 2.2V @ 250µA 12nC @ 10V 355pF @ 20V 2.75W, 2.95W Surface Mount 8-SOIC (0.154", 3.90mm Width)