N and P-Channel,FET Type
22 mOhm @ 5.7A, 4.5V,Rds On (Max) @ Id, Vgs
1 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI6562CDQ-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 6.7A, 6.1A 22 mOhm @ 5.7A, 4.5V 1.5V @ 250µA 23nC @ 10V 850pF @ 10V 1.6W, 1.7W Surface Mount 8-TSSOP (0.173", 4.40mm Width)