N and P-Channel,FET Type
7.2A, 4.6A,Current - Continuous Drain (Id) @ 25°C
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4511DY-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 14.5 mOhm @ 9.6A, 10V 1.8V @ 250µA 18nC @ 4.5V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4511DY-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 14.5 mOhm @ 9.6A, 10V 1.8V @ 250µA 18nC @ 4.5V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI5517DU-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 39 mOhm @ 4.4A, 4.5V 1V @ 250µA 16nC @ 8V 520pF @ 10V 2.3W Surface Mount -