N and P-Channel,FET Type
-,Package / Case
9 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FMP26-02P IXYS CORP
N and P-Channel 200V 26A, 17A 60 mOhm @ 25A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 125W Through Hole -
FMP76-010T IXYS CORP
N and P-Channel 100V 62A, 54A 11 mOhm @ 25A, 10V 4.5V @ 250µA 104nC @ 10V 5080pF @ 25V 89W, 132W Through Hole -
FDC6020C FAIRCHILD SEMICONDUCTOR CORP
N and P-Channel 20V 5.9A, 4.2A 27 mOhm @ 5.9A, 4.5V 1.5V @ 250µA 8nC @ 4.5V 677pF @ 10V 1.2W Surface Mount -
FDC6020C_F077 FAIRCHILD SEMICONDUCTOR CORP
N and P-Channel 20V 5.9A, 4.2A 27 mOhm @ 5.9A, 4.5V 1.5V @ 250µA 8nC @ 4.5V 677pF @ 10V 1.2W Surface Mount -
FMP36-015P IXYS CORP
N and P-Channel 150V 36A, 22A 40 mOhm @ 31A, 10V 5.5V @ 250µA 70nC @ 10V 2250pF @ 25V 125W Through Hole -
MP6M14TCR ROHM CO LTD
N and P-Channel 30V 8A (Ta), 6A (Ta) 25 mOhm @ 8A, 10V 2.5V @ 1mA 7.3nC @ 5V 470pF @ 10V 2W - -
SI5517DU-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 6A 39 mOhm @ 4.4A, 4.5V 1V @ 250µA 16nC @ 8V 520pF @ 10V 8.3W Surface Mount -
SI5517DU-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 39 mOhm @ 4.4A, 4.5V 1V @ 250µA 16nC @ 8V 520pF @ 10V 2.3W Surface Mount -
SI5519DU-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 6A, 4.8A 36 mOhm @ 6.1A, 4.5V 1.8V @ 250µA 17.5nC @ 10V 660pF @ 10V 2.27W Surface Mount -