N and P-Channel,FET Type
N and P-Channel,FET Type
1.1W,Power - Max
17 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTHC5513T1G ON SEMICONDUCTOR
N and P-Channel 20V 2.9A, 2.2A 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 4nC @ 4.5V 180pF @ 10V 1.1W Surface Mount 8-SMD, Flat Lead
NTHD3100CT1G ON SEMICONDUCTOR
N and P-Channel 20V 2.9A, 3.2A 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 2.3nC @ 4.5V 165pF @ 10V 1.1W Surface Mount 8-SMD, Flat Lead
NTHC5513T1 ON SEMICONDUCTOR
N and P-Channel 20V 2.9A, 2.2A 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 4nC @ 4.5V 180pF @ 10V 1.1W Surface Mount 8-SMD, Flat Lead
NTHD3100CT1 ON SEMICONDUCTOR
N and P-Channel 20V 2.9A, 3.2A 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 2.3nC @ 4.5V 165pF @ 10V 1.1W Surface Mount 8-SMD, Flat Lead
NTHD3100CT3 ON SEMICONDUCTOR
N and P-Channel 20V 2.9A, 3.2A 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 2.3nC @ 4.5V 165pF @ 10V 1.1W Surface Mount 8-SMD, Flat Lead
NTHD3100CT3G ON SEMICONDUCTOR
N and P-Channel 20V 2.9A, 3.2A 80 mOhm @ 2.9A, 4.5V 1.2V @ 250µA 2.3nC @ 4.5V 165pF @ 10V 1.1W Surface Mount 8-SMD, Flat Lead
SI4511DY-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 14.5 mOhm @ 9.6A, 10V 1.8V @ 250µA 18nC @ 4.5V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI5515DC-T1-E3 VISHAY SILICONIX
N and P-Channel 20V 4.4A, 3A 40 mOhm @ 4.4A, 4.5V 1V @ 250µA 7.5nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
SI4539ADY-T1-E3 VISHAY SILICONIX
N and P-Channel 30V 4.4A, 3.7A 36 mOhm @ 5.9A, 10V 1V @ 250µA 20nC @ 10V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4511DY-T1-GE3 VISHAY SILICONIX
N and P-Channel 20V 7.2A, 4.6A 14.5 mOhm @ 9.6A, 10V 1.8V @ 250µA 18nC @ 4.5V - 1.1W Surface Mount 8-SOIC (0.154", 3.90mm Width)