Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
FDC6506P | FAIRCHILD SEMICONDUCTOR CORP | 2 P-Channel (Dual) | 30V | 1.8A | 170 mOhm @ 1.8A, 10V | 3V @ 250µA | 3.5nC @ 10V | 190pF @ 15V | 700mW | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | |
NTLJD4150PTBG | ON SEMICONDUCTOR | 2 P-Channel (Dual) | 30V | 1.8A | 135 mOhm @ 4A, 10V | 2V @ 250µA | 4.5nC @ 4.5V | 300pF @ 15V | 700mW | Surface Mount | 6-WDFN Exposed Pad | |
SI3911DV-T1-E3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 20V | 1.8A | 145 mOhm @ 2.2A, 4.5V | 450mV @ 250µA | 7.5nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
SI3993DV-T1-E3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 30V | 1.8A | 133 mOhm @ 2.2A, 10V | 3V @ 250µA | 5nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
SI3911DV-T1-GE3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 20V | 1.8A | 145 mOhm @ 2.2A, 4.5V | 450mV @ 250µA | 7.5nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
SI3993DV-T1-GE3 | VISHAY SILICONIX | 2 P-Channel (Dual) | 30V | 1.8A | 133 mOhm @ 2.2A, 10V | 3V @ 250µA | 5nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |