| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTMD4N03R2G | ON SEMICONDUCTOR | 2 N-Channel (Dual) | 30V | 4A | 60 mOhm @ 4A, 10V | 3V @ 250µA | 16nC @ 10V | 400pF @ 20V | 2W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TPC8212-H(TE12LQ,M | TOSHIBA CORP | 2 N-Channel (Dual) | 30V | 6A | 21 mOhm @ 3A, 10V | 2.3V @ 1mA | 16nC @ 10V | 840pF @ 10V | 750mW | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | |
| SI6954ADQ-T1-E3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 30V | 3.1A | 53 mOhm @ 3.4A, 10V | 1V @ 250µA | 16nC @ 10V | - | 830mW | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | |
| SI6954ADQ-T1-GE3 | VISHAY SILICONIX | 2 N-Channel (Dual) | 30V | 3.1A | 53 mOhm @ 3.4A, 10V | 1V @ 250µA | 16nC @ 10V | - | 830mW | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) |
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