2 N-Channel (Dual),FET Type
6.1A,Current - Continuous Drain (Id) @ 25°C
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMG8601UFG-7 DIODES INC
2 N-Channel (Dual) 20V 6.1A 23 mOhm @ 6.5A, 4.5V 950mV @ 250µA 8.8nC @ 4.5V 143pF @ 10V 920mW Surface Mount 8-UDFN Exposed Pad
SI7964DP-T1-E3 VISHAY SILICONIX
2 N-Channel (Dual) 60V 6.1A 23 mOhm @ 9.6A, 10V 4.5V @ 250µA 65nC @ 10V - 1.4W Surface Mount PowerPAK® SO-8 Dual
SI7964DP-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 60V 6.1A 23 mOhm @ 9.6A, 10V 4.5V @ 250µA 65nC @ 10V - 1.4W Surface Mount PowerPAK® SO-8 Dual