| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFP08S60SNTU | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 100µA @ 600V | - | 3.6°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| IDD04S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 5.6A | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 3.6°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDH04S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 3.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH03G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 100pF @ 1V, 1MHz | 3.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| LXA10FP600 | POWER INTEGRATIONS INC | Schottky | 600V | 10A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 23ns | 250µA @ 600V | - | 3.6°C/W Jc | 150°C (Max) | Through Hole | TO-220-2 Full Pack | |
| FFP08S60SNTU_G | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 100µA @ 600V | - | 3.6°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 Full Pack | |
| FFP04S60STU | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 4A | 2.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | 3.6°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 |
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