| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCS206AJTLL | ROHM CO LTD | Silicon Carbide Schottky | 650V | 6A (DC) | 1.55V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | 3.1°C/W Jc | 175°C (Max) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STTH812DI | STMICROELECTRONICS | Standard | 1200V (1.2kV) | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | 3.1°C/W Jc | 175°C (Max) | Through Hole | TO-220-3 | |
| STTH1210DI | STMICROELECTRONICS | Standard | 1000V (1kV) | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | 3.1°C/W Jc | 175°C (Max) | Through Hole | TO-220-3 | |
| C3D08065I | CREE INC | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | 3.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| IDH04G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 130pF @ 1V, 1MHz | 3.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 |
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