| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH05SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | 2.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH05S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | 2.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| STPSC4H065D | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 4A | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 200pF @ 0V, 1MHz | 2.7°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| STPSC4H065B-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 4A | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 200pF @ 0V, 1MHz | 2.7°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| CRNA20-1200PT | CRYDOM INC | Standard | 1200V (1.2kV) | 12.7A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | 2.7°C/W Jc | -40°C ~ 125°C | Through Hole | TO-220-2 Isolated Tab | |
| CRNA20-1200 | CRYDOM INC | Standard | 1200V (1.2kV) | 12.7A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | 2.7°C/W Jc | -40°C ~ 125°C | Through Hole | TO-220-2 Isolated Tab | |
| IDH05G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 160pF @ 1V, 1MHz | 2.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDD05SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | 2.7°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MBRB10H100-E3/81 | VISHAY SEMICONDUCTORS | Schottky | 100V | 10A | 770mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | 2.7°C/W Jc | -65°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| MBRF10H100-E3/45 | VISHAY SEMICONDUCTORS | Schottky | 100V | 10A | 770mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | 2.7°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 Full Pack, Isolated Tab |
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