| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TRS8E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 44pF @ 650V, 1MHz | 2.35°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 |
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