IDH06SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
6A (DC)
|
2.3V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 600V
|
130pF @ 1V, 1MHz
|
2.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDD06SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
6A (DC)
|
2.3V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 600V
|
130pF @ 1V, 1MHz
|
2.1°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
STTA2006PI |
STMICROELECTRONICS |
|
Standard
|
600V
|
20A
|
1.75V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
100µA @ 600V
|
-
|
2.1°C/W Jc
|
150°C (Max)
|
Through Hole, Radial
|
DOP3I-2 Insulated (Straight Leads)
|
STTA1512PIRG |
STMICROELECTRONICS |
|
Standard
|
1200V (1.2kV)
|
15A
|
2.1V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
105ns
|
100µA @ 1200V
|
-
|
2.1°C/W Jc
|
150°C (Max)
|
Through Hole, Radial
|
DOP3I-2 Insulated (Straight Leads)
|
STTA2006PIRG |
STMICROELECTRONICS |
|
Standard
|
600V
|
20A
|
1.75V @ 20A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
100µA @ 600V
|
-
|
2.1°C/W Jc
|
150°C (Max)
|
Through Hole, Radial
|
DOP3I-2 Insulated (Straight Leads)
|