2.1°C/W Jc,Thermal Resistance
5 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
IDH06SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 6A (DC) 2.3V @ 6A No Recovery Time > 500mA (Io) 0ns 50µA @ 600V 130pF @ 1V, 1MHz 2.1°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
IDD06SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 6A (DC) 2.3V @ 6A No Recovery Time > 500mA (Io) 0ns 50µA @ 600V 130pF @ 1V, 1MHz 2.1°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STTA2006PI STMICROELECTRONICS
Standard 600V 20A 1.75V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 60ns 100µA @ 600V - 2.1°C/W Jc 150°C (Max) Through Hole, Radial DOP3I-2 Insulated (Straight Leads)
STTA1512PIRG STMICROELECTRONICS
Standard 1200V (1.2kV) 15A 2.1V @ 15A Fast Recovery =< 500ns, > 200mA (Io) 105ns 100µA @ 1200V - 2.1°C/W Jc 150°C (Max) Through Hole, Radial DOP3I-2 Insulated (Straight Leads)
STTA2006PIRG STMICROELECTRONICS
Standard 600V 20A 1.75V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 60ns 100µA @ 600V - 2.1°C/W Jc 150°C (Max) Through Hole, Radial DOP3I-2 Insulated (Straight Leads)