DSA2-12A |
IXYS CORP |
|
Avalanche
|
1200V (1.2kV)
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 1200V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
DS2-12A |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 1200V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
DS2-08A |
IXYS CORP |
|
Standard
|
800V
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 800V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
DSA2-18A |
IXYS CORP |
|
Avalanche
|
1800V (1.8kV)
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 1800V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
DSA2-16A |
IXYS CORP |
|
Avalanche
|
1600V (1.6kV)
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 1600V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
DLN10C-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DLN10C-BT |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DLM10C |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DLM10C-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DLM10E-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
400V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-204AL, DO-41, Axial
|