1.8°C/W Jc,Thermal Resistance
175°C (Max),Operating Temperature - Junction
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
SCS210AJTLL ROHM CO LTD
Silicon Carbide Schottky 650V 10A (DC) 1.55V @ 10A No Recovery Time > 500mA (Io) 0ns 200µA @ 600V 365pF @ 1V, 1MHz 1.8°C/W Jc 175°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SCS210KE2C ROHM CO LTD
Silicon Carbide Schottky 1200V (1.2kV) 10A (DC) - No Recovery Time > 500mA (Io) 0ns - - 1.8°C/W Jc 175°C (Max) Through Hole TO-247-3
STTH3010PI STMICROELECTRONICS
Standard 1000V (1kV) 30A 2V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 100ns 15µA @ 1000V - 1.8°C/W Jc 175°C (Max) Through Hole, Radial DOP3I-2 Insulated (Straight Leads)
STTH3002PI STMICROELECTRONICS
Standard 200V 30A 1.05V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 50ns 20µA @ 200V - 1.8°C/W Jc 175°C (Max) Through Hole, Radial DOP3I-2 Insulated (Straight Leads)
SCS105KGC ROHM CO LTD
Silicon Carbide Schottky 1200V (1.2kV) 5A (DC) 1.75V @ 5A No Recovery Time > 500mA (Io) 0ns 100µA @ 1200V 325pF @ 1V, 1MHz 1.8°C/W Jc 175°C (Max) Through Hole TO-220-2
SCS110AGC ROHM CO LTD
Silicon Carbide Schottky 600V 10A 1.7V @ 10A No Recovery Time > 500mA (Io) 0ns 200µA @ 600V 430pF @ 1V, 1MHz 1.8°C/W Jc 175°C (Max) Through Hole TO-220-2