DSEI20-12A |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
17A
|
2.15V @ 12A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
750µA @ 1200V
|
-
|
1.6°C/W Jc
|
-40°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MSR860G |
ON SEMICONDUCTOR |
|
Standard
|
600V
|
8A
|
1.7V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
120ns
|
10µA @ 600V
|
-
|
1.6°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBRD5H100T4G |
ON SEMICONDUCTOR |
|
Schottky
|
100V
|
5A
|
710mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
3.5µA @ 100V
|
-
|
1.6°C/W Jc
|
-65°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
MSR1560G |
ON SEMICONDUCTOR |
|
Standard
|
600V
|
15A
|
1.8V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
45ns
|
15µA @ 600V
|
-
|
1.6°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
C3D06065A |
CREE INC |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.8V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
294pF @ 0V, 1MHz
|
1.6°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
CRNB25-1200PT |
CRYDOM INC |
|
Standard
|
1200V (1.2kV)
|
15.9A
|
1.1V @ 25A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
100µA @ 1200V
|
-
|
1.6°C/W Jc
|
-40°C ~ 125°C
|
Through Hole
|
TO-220-2
|
CRNB25-1200 |
CRYDOM INC |
|
Standard
|
1200V (1.2kV)
|
15.9A
|
1.1V @ 25A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
100µA @ 1200V
|
-
|
1.6°C/W Jc
|
-40°C ~ 125°C
|
Through Hole
|
TO-220-2
|
IDW16G65C5 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
650V
|
16A (DC)
|
1.7V @ 16A
|
No Recovery Time > 500mA (Io)
|
0ns
|
600µA @ 650V
|
470pF @ 1V, 1MHz
|
1.6°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-247-3
|
MSR860 |
ON SEMICONDUCTOR |
|
Standard
|
600V
|
8A
|
1.7V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
120ns
|
10µA @ 600V
|
-
|
1.6°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MSR1560 |
ON SEMICONDUCTOR |
|
Standard
|
600V
|
15A
|
1.8V @ 15A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
45ns
|
15µA @ 600V
|
-
|
1.6°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|