| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFP15S60STU | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | 1.3°C/W Jc | - | Through Hole | TO-220-2 | |
| IDH12S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 530pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| LXA15T600 | POWER INTEGRATIONS INC | Schottky | 600V | 15A | 3.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 250µA @ 600V | - | 1.3°C/W Jc | 150°C (Max) | Through Hole | TO-220-2 | |
| IDW20G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| IDB23E60 | INFINEON TECHNOLOGIES AG | Standard | 600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | 1.3°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IDB12E120 | INFINEON TECHNOLOGIES AG | Standard | 1200V (1.2kV) | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | 1.3°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IDP23E60 | INFINEON TECHNOLOGIES AG | Standard | 600V | 41A (DC) | 2V @ 23A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 50µA @ 600V | - | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDP12E120 | INFINEON TECHNOLOGIES AG | Standard | 1200V (1.2kV) | 28A (DC) | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 100µA @ 1200V | - | 1.3°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| IDD09SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDH09SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 |
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