RURP3060 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
30A
|
1.5V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
250µA @ 600V
|
-
|
1.2°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
RHRP3060 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
30A
|
2.1V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
45ns
|
250µA @ 600V
|
-
|
1.2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
RHRG3060 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
30A
|
2.1V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
45ns
|
250µA @ 600V
|
-
|
1.2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole, Radial
|
TO-247-2
|
RURG3060 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
600V
|
30A
|
1.5V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
250µA @ 600V
|
-
|
1.2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole, Radial
|
TO-247-2
|
RHRG30120 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1200V (1.2kV)
|
30A
|
3.2V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
85ns
|
250µA @ 1200V
|
-
|
1.2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole, Radial
|
TO-247-2
|
RHRP30120 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1200V (1.2kV)
|
30A
|
3.2V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
85ns
|
250µA @ 1200V
|
-
|
1.2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDH12SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
12A (DC)
|
2.1V @ 12A
|
No Recovery Time > 500mA (Io)
|
0ns
|
100µA @ 600V
|
310pF @ 1V, 1MHz
|
1.2°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C3D10060G |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
10A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 600V
|
480pF @ 0V, 1MHz
|
1.2°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
RURG30120 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1200V (1.2kV)
|
30A
|
2.1V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
150ns
|
250µA @ 1200V
|
-
|
1.2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole, Radial
|
TO-247-2
|
FES16AT |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
50V
|
16A
|
950mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 50V
|
170pF @ 4V, 1MHz
|
1.2°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|