| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FFP30S60STU | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | 1.1°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FFH30S60STU | FAIRCHILD SEMICONDUCTOR CORP | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | 1.1°C/W Jc | -65°C ~ 150°C | Through Hole, Radial | TO-247-2 | |
| CSD10060A | CREE INC | Silicon Carbide Schottky | 600V | 16.5A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 550pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| CSD10060G | CREE INC | Silicon Carbide Schottky | 600V | 16.5A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 550pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| C3D10065A | CREE INC | Silicon Carbide Schottky | 650V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 480pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C4D08120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 12.1A | 3V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C4D10120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 14A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D10060A | CREE INC | Silicon Carbide Schottky | 600V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH16S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 650pF @ 1V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDB18E120 | INFINEON TECHNOLOGIES AG | Standard | 1200V (1.2kV) | 31A (DC) | 2.15V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 195ns | 100µA @ 1200V | - | 1.1°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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