| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDV03S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 3A (DC) | 1.9V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 90pF @ 1V, 1MHz | 5.9°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| PMEG4020EPK,315 | NXP SEMICONDUCTORS | Schottky | 40V | 2A | 660mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 10V | 90pF @ 1V, 1MHz | 20°C/W Jl | 150°C (Max) | Surface Mount | 2-XDFN | |
| PMEG4015EPK,315 | NXP SEMICONDUCTORS | Schottky | 40V | 1.5A | 610mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 10V | 90pF @ 1V, 1MHz | 20°C/W Jl | 150°C (Max) | Surface Mount | 2-XDFN |
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