| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DB2460100L | PANASONIC CORP | Schottky | 60V | 3A (DC) | 650mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 150µA @ 60V | 65pF @ 10V, 1MHz | - | 150°C (Max) | Surface Mount | SOD-128 | |
| JANTXV1N5809 | MICROSEMI CORP | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 65pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| JANTXV1N5807 | MICROSEMI CORP | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 65pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| JANTXV1N5811 | MICROSEMI CORP | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 65pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial |
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