60pF @ 1V, 1MHz,Capacitance @ Vr, F
4 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
IDH03SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 3A (DC) 2.3V @ 3A No Recovery Time > 500mA (Io) 0ns 15µA @ 600V 60pF @ 1V, 1MHz 3.9°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
IDV02S60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 2A (DC) 1.9V @ 2A No Recovery Time > 500mA (Io) 0ns 15µA @ 600V 60pF @ 1V, 1MHz 8.5°C/W Jc -55°C ~ 175°C Through Hole TO-220-2 Full Pack
IDD03SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 3A (DC) 2.3V @ 3A No Recovery Time > 500mA (Io) 0ns 15µA @ 600V 60pF @ 1V, 1MHz 3.9°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PMEG4010EPK,315 NXP SEMICONDUCTORS
Schottky 40V 1A 600mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 3ns 4µA @ 1V 60pF @ 1V, 1MHz 20°C/W Jl 150°C (Max) Surface Mount 2-XDFN