Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH03SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | 3.9°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
IDV02S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 2A (DC) | 1.9V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | 8.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
IDD03SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | 3.9°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
PMEG4010EPK,315 | NXP SEMICONDUCTORS | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 3ns | 4µA @ 1V | 60pF @ 1V, 1MHz | 20°C/W Jl | 150°C (Max) | Surface Mount | 2-XDFN |