| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIDC24D30SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer | |
| PMEG4050ETP,115 | NXP SEMICONDUCTORS | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 40V | 600pF @ 1V, 1MHz | - | - | Surface Mount | SOD-128 | |
| PMEG4050EP,115 | NXP SEMICONDUCTORS | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 40V | 600pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | SOD-128 |
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