| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UPS160E3/TR13 | MICROSEMI COMMERCIAL BUSINESS UNIT | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | 15°C/W Jc | -55°C ~ 125°C | Surface Mount | DO-216AA | |
| UPS160E3/TR7 | MICROSEMI COMMERCIAL BUSINESS UNIT | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | 15°C/W Jc | -55°C ~ 125°C | Surface Mount | DO-216AA | |
| UPS160/TR13 | MICROSEMI COMMERCIAL BUSINESS UNIT | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | 15°C/W Jc | -55°C ~ 125°C | Surface Mount | DO-216AA | |
| UPS160/TR7 | MICROSEMI COMMERCIAL BUSINESS UNIT | Schottky | 60V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 55pF @ 4V, 1MHz | 15°C/W Jc | -55°C ~ 125°C | Surface Mount | DO-216AA | |
| NSB8MT-E3/81 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 55pF @ 4V, 1MHz | 3°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| NSB8JT-E3/81 | VISHAY SEMICONDUCTORS | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 55pF @ 4V, 1MHz | 3°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| AR4PK-M3/86A | VISHAY SEMICONDUCTORS | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | 5°C/W Jl | -55°C ~ 175°C | Surface Mount | TO-277, 3-PowerDFN | |
| AR4PM-M3/86A | VISHAY SEMICONDUCTORS | Avalanche | 1000V (1kV) | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | 5°C/W Jl | -55°C ~ 175°C | Surface Mount | TO-277, 3-PowerDFN | |
| AR4PK-M3/87A | VISHAY SEMICONDUCTORS | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | 5°C/W Jl | -55°C ~ 175°C | Surface Mount | TO-277, 3-PowerDFN | |
| AR4PM-M3/87A | VISHAY SEMICONDUCTORS | Avalanche | 1000V (1kV) | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | 5°C/W Jl | -55°C ~ 175°C | Surface Mount | TO-277, 3-PowerDFN |
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