| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH10S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 500pF @ 1V, 1MHz | 1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| PMEG3030BEP,115 | NXP SEMICONDUCTORS | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 500pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | SOD-128 |
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