| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STPSC10H065D | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | 1.5°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| STPSC10H065G-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | 1.5°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| C3D10065A | CREE INC | Silicon Carbide Schottky | 650V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 480pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D10065I | CREE INC | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 480pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| C3D10060A | CREE INC | Silicon Carbide Schottky | 600V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D10060G | CREE INC | Silicon Carbide Schottky | 600V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | 1.2°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STPSC10H065B-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | 1.5°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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