40pF @ 0V, 1MHz,Capacitance @ Vr, F
9 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1SS394TE85LF TOSHIBA CORP
Schottky 10V 100mA 500mV @ 100mA Small Signal =< 200mA (Io), Any Speed - 20µA @ 10V 40pF @ 0V, 1MHz - 125°C (Max) Surface Mount TO-236-3, SC-59, SOT-23-3
CDBT0230-HF COMCHIP TECHNOLOGY CORP
Schottky 30V 200mA 500mV @ 200mA Small Signal =< 200mA (Io), Any Speed - 50µA @ 30V 40pF @ 0V, 1MHz - 125°C (Max) Surface Mount TO-236-3, SC-59, SOT-23-3
JAN1N6642US MICROSEMI CORP
Standard 75V 300mA 1.2V @ 100mA Fast Recovery =< 500ns, > 200mA (Io) 5ns 500nA @ 75V 40pF @ 0V, 1MHz 250°C/W Ja -65°C ~ 175°C Surface Mount E-MELF
1SS389(TL3,F,D) TOSHIBA CORP
Schottky 10V 100mA 500mV @ 100mA Small Signal =< 200mA (Io), Any Speed - 20µA @ 10V 40pF @ 0V, 1MHz - 125°C (Max) Surface Mount SC-79, SOD-523
1SS367TPH3F TOSHIBA CORP
Schottky 10V 100mA 500mV @ 100mA Small Signal =< 200mA (Io), Any Speed - 20µA @ 10V 40pF @ 0V, 1MHz - 125°C (Max) Surface Mount SC-76, SOD-323
1N5059TR VISHAY SEMICONDUCTORS
Avalanche 200V 2A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 200V 40pF @ 0V, 1MHz 45°C/W Ja -55°C ~ 175°C Through Hole SOD-57, Axial
1N5061TR VISHAY SEMICONDUCTORS
Avalanche 600V 2A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 600V 40pF @ 0V, 1MHz 45°C/W Ja -55°C ~ 175°C Through Hole SOD-57, Axial
1N5060TR VISHAY SEMICONDUCTORS
Avalanche 400V 2A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 400V 40pF @ 0V, 1MHz 45°C/W Ja -55°C ~ 175°C Through Hole SOD-57, Axial
1N5062TR VISHAY SEMICONDUCTORS
Avalanche 800V 2A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 800V 40pF @ 0V, 1MHz 45°C/W Ja -55°C ~ 175°C Through Hole SOD-57, Axial