| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDW12G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 360pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| PMEG6030ETPX | NXP SEMICONDUCTORS | Schottky | 60V | 3A | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 200µA @ 60V | 360pF @ 1V, 1MHz | 12°C/W Jl | 175°C (Max) | Surface Mount | SOD-128 | |
| PMEG6030EP,115 | NXP SEMICONDUCTORS | Schottky | 60V | 3A | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 360pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | SOD-128 |
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