STPSC6H065G-TR |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.75V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
300pF @ 0V, 1MHz
|
2.4°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
STPSC6H065D |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.75V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
300pF @ 0V, 1MHz
|
2.4°C/W Jc
|
-40°C ~ 175°C
|
Through Hole
|
TO-220-2
|
STPSC6H065B-TR |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.75V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
300pF @ 0V, 1MHz
|
2.4°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
SDP06S60 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
6A (DC)
|
1.7V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
300pF @ 0V, 1MHz
|
2.6°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-3
|
SDT06S60 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
6A (DC)
|
1.7V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
300pF @ 0V, 1MHz
|
2.6°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SDB06S60 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
6A (DC)
|
1.7V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
300pF @ 0V, 1MHz
|
2.6°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|