| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| US2JFL-TP | MICRO COMMERCIAL COMPONENTS | Standard | 600V | 2A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 28pF @ 4V, 1MHz | 30°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-221AC, SMA Flat Leads | |
| GI504-E3/54 | VISHAY SEMICONDUCTORS | Standard | 400V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 400V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI501-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI510-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI500-E3/54 | VISHAY SEMICONDUCTORS | Standard | 50V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 50V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI502-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI506-E3/54 | VISHAY SEMICONDUCTORS | Standard | 600V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI508-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 800V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI501-E3/73 | VISHAY SEMICONDUCTORS | Standard | 100V | 3A | 1.1V @ 9.4A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 100V | 28pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| BY397P-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 200V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 125°C | Through Hole | DO-201AD, Axial |
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