| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDB06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.9°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IDD09SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDH06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDV06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 4.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| IDH09SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| XBS203V17R-G | TOREX SEMICONDUCTOR LTD | Schottky | 30V | 2A | 390mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 3mA @ 30V | 280pF @ 1V, 1MHz | - | 125°C (Max) | Surface Mount | DO-214AC, SMA |
© 2016 Copyright
