| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCS205KGC | ROHM CO LTD | Silicon Carbide Schottky | 1200V (1.2kV) | 5A (DC) | 1.6V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 270pF @ 1V, 1MHz | 1.7°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| IDH09G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 310µA @ 650V | 270pF @ 1V, 1MHz | 1.8°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| PMEG4020EPA,115 | NXP SEMICONDUCTORS | Schottky | 40V | 2A | 535mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 100µA @ 40V | 270pF @ 1V, 1MHz | 10°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad |
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