Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IDH08G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 280µA @ 650V | 250pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
IDH05S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
IDY10S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | 1°C/W Jc, 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 Variant | |
PMEG6020EPA,115 | NXP SEMICONDUCTORS | Schottky | 60V | 2A | 575mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 78ns | 250µA @ 60V | 250pF @ 1V, 1MHz | 10°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad | |
PMEG4020ETP,115 | NXP SEMICONDUCTORS | Schottky | 40V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 250pF @ 1V, 1MHz | - | - | Surface Mount | SOD-128 | |
PMEG4030ER,115 | NXP SEMICONDUCTORS | Schottky | 40V | 3A | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 250pF @ 1V, 1MHz | 18°C/W Jl | 150°C (Max) | Surface Mount | SOD-123W |