240pF @ 1V, 1MHz,Capacitance @ Vr, F
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
IDH05S60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 5A (DC) 1.7V @ 5A No Recovery Time > 500mA (Io) 0ns 70µA @ 600V 240pF @ 1V, 1MHz 2.7°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
IDH08SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 8A (DC) 2.1V @ 8A No Recovery Time > 500mA (Io) 0ns 70µA @ 600V 240pF @ 1V, 1MHz 1.5°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
IDV05S60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 5A (DC) 1.7V @ 5A No Recovery Time > 500mA (Io) 0ns 70µA @ 600V 240pF @ 1V, 1MHz 5°C/W Jc -55°C ~ 175°C Through Hole TO-220-2 Full Pack
IDD08SG60C INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 600V 8A (DC) 2.1V @ 8A No Recovery Time > 500mA (Io) 0ns 70µA @ 600V 240pF @ 1V, 1MHz 1.5°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
PMEG6020ETR,115 NXP SEMICONDUCTORS
Schottky 60V 2A 530mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) 8.5ns 150µA @ 60V 240pF @ 1V, 1MHz 12°C/W Jl 175°C (Max) Surface Mount SOD-123W
PMEG6020ETP,115 NXP SEMICONDUCTORS
Schottky 60V 2A 530mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) 8.6ns 150µA @ 60V 240pF @ 1V, 1MHz 12°C/W Jl 175°C (Max) Surface Mount SOD-128
PMEG6020ER,115 NXP SEMICONDUCTORS
Schottky 60V 2A 530mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) - 150µA @ 60V 240pF @ 1V, 1MHz 18°C/W Jl 150°C (Max) Surface Mount SOD-123W
PMEG6020EP,115 NXP SEMICONDUCTORS
Schottky 60V 2A 530mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) - 150µA @ 60V 240pF @ 1V, 1MHz 12°C/W Jl 150°C (Max) Surface Mount SOD-128