IDH05S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
5A (DC)
|
1.7V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
70µA @ 600V
|
240pF @ 1V, 1MHz
|
2.7°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDH08SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
8A (DC)
|
2.1V @ 8A
|
No Recovery Time > 500mA (Io)
|
0ns
|
70µA @ 600V
|
240pF @ 1V, 1MHz
|
1.5°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDV05S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
5A (DC)
|
1.7V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
70µA @ 600V
|
240pF @ 1V, 1MHz
|
5°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2 Full Pack
|
IDD08SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
8A (DC)
|
2.1V @ 8A
|
No Recovery Time > 500mA (Io)
|
0ns
|
70µA @ 600V
|
240pF @ 1V, 1MHz
|
1.5°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
PMEG6020ETR,115 |
NXP SEMICONDUCTORS |
|
Schottky
|
60V
|
2A
|
530mV @ 2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
8.5ns
|
150µA @ 60V
|
240pF @ 1V, 1MHz
|
12°C/W Jl
|
175°C (Max)
|
Surface Mount
|
SOD-123W
|
PMEG6020ETP,115 |
NXP SEMICONDUCTORS |
|
Schottky
|
60V
|
2A
|
530mV @ 2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
8.6ns
|
150µA @ 60V
|
240pF @ 1V, 1MHz
|
12°C/W Jl
|
175°C (Max)
|
Surface Mount
|
SOD-128
|
PMEG6020ER,115 |
NXP SEMICONDUCTORS |
|
Schottky
|
60V
|
2A
|
530mV @ 2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
150µA @ 60V
|
240pF @ 1V, 1MHz
|
18°C/W Jl
|
150°C (Max)
|
Surface Mount
|
SOD-123W
|
PMEG6020EP,115 |
NXP SEMICONDUCTORS |
|
Schottky
|
60V
|
2A
|
530mV @ 2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
150µA @ 60V
|
240pF @ 1V, 1MHz
|
12°C/W Jl
|
150°C (Max)
|
Surface Mount
|
SOD-128
|