| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIDC11D60SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer | |
| PMEG3020EPA,115 | NXP SEMICONDUCTORS | Schottky | 30V | 2A | 470mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 2.5mA @ 30V | 150pF @ 1V, 1MHz | 12°C/W Jl | 150°C (Max) | Surface Mount | 3-UDFN Exposed Pad | |
| XBS104V14R-G | TOREX SEMICONDUCTOR LTD | Schottky | 40V | 1A | 410mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 41ns | 2mA @ 40V | 150pF @ 1V, 1MHz | - | 125°C (Max) | Surface Mount | SOD-123 |
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