| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH03G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 100pF @ 1V, 1MHz | 3.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| PMEG3010CEJ,115 | NXP SEMICONDUCTORS | Schottky | 30V | 1A (DC) | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 100pF @ 1V, 1MHz | 55°C/W Jl | 150°C (Max) | Surface Mount | SC-90, SOD-323F | |
| PMEG3010CEH,115 | NXP SEMICONDUCTORS | Schottky | 30V | 1A (DC) | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 100pF @ 1V, 1MHz | 60°C/W Jl | 150°C (Max) | Surface Mount | SOD-123F |
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