| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TRS8E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 44pF @ 650V, 1MHz | 2.35°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| TRS20N65D,S1F | TOSHIBA CORP | 1 Pair Common Cathode | 650V | 20A (DC) | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 55pF @ 650V, 1MHz | 0.9°C/W Jc | 175°C (Max) | - | - | |
| TRS24N65D,S1F | TOSHIBA CORP | 1 Pair Common Cathode | 650V | 24A (DC) | 1.7V @ 24A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 65pF @ 650V, 1MHz | 0.84°C/W Jc | 175°C (Max) | - | - | |
| TRS10E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | - | - | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| TRS12N65D,S1F | TOSHIBA CORP | 1 Pair Common Cathode | 650V | 12A (DC) | 1.7V @ 12A | - | - | 90µA @ 650V | 35pF @ 650V, 1MHz | 1.15°C/W Jc | 175°C (Max) | - | - | |
| TRS6E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 35pF @ 650V, 1MHz | 2.8°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| TRS16N65D,S1F | TOSHIBA CORP | 1 Pair Common Cathode | 650V | 16A (DC) | 1.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 44pF @ 650V, 1MHz | 1.01°C/W Jc | -55°C ~ 175°C | - | - |
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