| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5616US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | 13°C/W Jl | -65°C ~ 200°C | - | - | |
| 1N5616 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial | |
| 1N5617 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | 38°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| 1N5617US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - | |
| JANTX1N5617 | MICROSEMI CORP | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | 38°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JAN1N5616 | MICROSEMI CORP | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial | |
| JAN1N5617 | MICROSEMI CORP | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | 38°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JANTX1N5616 | MICROSEMI CORP | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | 38°C/W Jl | -65°C ~ 200°C | Through Hole | A, Axial | |
| JAN1N5616US | MICROSEMI CORP | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | 38°C/W Jl | -65°C ~ 200°C | - | - | |
| JAN1N5617US | MICROSEMI CORP | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | - | 38°C/W Jl | -65°C ~ 175°C | - | - |
© 2016 Copyright
