| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCS220AEC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 600V | 730pF @ 1V, 1MHz | 1.1°C/W Jc | 175°C (Max) | - | - | |
| SCS220AMC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 600V | 730pF @ 1V, 1MHz | 3.7°C/W Jc | 175°C (Max) | - | - | |
| SCS220AGC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 20A (DC) | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | 1.1°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| SDT12S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 450pF @ 1V, 1MHz | 1.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| BY229X-800,127 | NXP SEMICONDUCTORS | Standard | 600V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 400µA @ 600V | - | 60°C/W Ja | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| SCS120AGC | ROHM CO LTD | Silicon Carbide Schottky | 600V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 860pF @ 1V, 1MHz | 1.4°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 |
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