400µA @ 1200V, Reverse Leakage Current @ Vr
4 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
SCS220KGC ROHM CO LTD
Silicon Carbide Schottky 1200V (1.2kV) 20A (DC) 1.6V @ 20A No Recovery Time > 500mA (Io) 0ns 400µA @ 1200V - 0.71°C/W Jc 175°C (Max) Through Hole TO-220-2
STPSC6H12B-TR1 STMICROELECTRONICS
Silicon Carbide Schottky 1200V (1.2kV) 6A 1.9V @ 6A No Recovery Time > 500mA (Io) 0ns 400µA @ 1200V 330pF @ 0V, 1MHz 1.9°C/W Jc -40°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
APT20SCD120S MICROSEMI POWER PRODUCTS GROUP
Silicon Carbide Schottky 1200V (1.2kV) 68A (DC) 1.8V @ 20A No Recovery Time > 500mA (Io) 0ns 400µA @ 1200V 1135pF @ 0V, 1MHz 0.6°C/W Jc -55°C ~ 150°C Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
SCS120KGC ROHM CO LTD
Silicon Carbide Schottky 1200V (1.2kV) 20A 1.75V @ 20A No Recovery Time > 500mA (Io) 0ns 400µA @ 1200V 1300pF @ 1V, 1MHz 1.1°C/W Jc 175°C (Max) Through Hole TO-220-2