350µA @ 60V, Reverse Leakage Current @ Vr
4 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
PMEG6010AED,115 NXP SEMICONDUCTORS
Schottky 60V 1A (DC) 650mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 60V 60pF @ 4V, 1MHz 230°C/W Ja 150°C (Max) Surface Mount SC-74, SOT-457
DB2460500L PANASONIC CORP
Schottky 60V 1A (DC) 450mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 12ns 350µA @ 60V 40pF @ 10V, 1MHz - 150°C (Max) Surface Mount SOD-128
DB2460600L PANASONIC CORP
Schottky 60V 3A (DC) 700mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) 12ns 350µA @ 60V 40pF @ 10V, 1MHz - 150°C (Max) Surface Mount SOD-128
STPS10L60D STMICROELECTRONICS
Schottky 60V 10A 600mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 60V - 1.6°C/W Jc 150°C (Max) Through Hole TO-220-2